Intel makes move to bolster DRAM interfaces

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Intel makes move to bolster DRAM interfaces

In a technical session at the International Solid State Circuits Conference Intel quietly signalled what may be the company’s most aggressive move to influence system memory architectures since the days when it made DRAMs. In a paper titled, “A 2 Gb/s Point-to-Point Heterogeneous Voltage-Capable DRAM Interface…” Intel engineers will disclose some details of a set of test chips that have validated an Intel-designed high-speed DRAM interconnect scheme. Hidden between the lines, the paper will also disclose that Intel has taken the scheme to two major DRAM vendors who have fabricated test chips of their own.

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