Samsung makes breakthrough in 0.10-micron process

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Samsung makes breakthrough in 0.10-micron process

South Korea-based Samsung Electronics has recently improved yield rates for its 0.10-micron DRAM process after resolving problems with alumina-aluminium oxide (Al2O3) dielectric, according to sources. A Samsung executive said the company has seen a breakthrough in the process and yield rates have improved to about 80% recently.

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