Sandisk has debuted a 64-gigabit (Gb), 2-bits-per-cell (X2) based monolithic chip made on 19-nanometer (nm) technology.
The 19nm process will enable the company to produce high-capacity, embedded and removable storage components for next-gen smartphones, tablet computers and other mobile devices.
“NAND flash chips based on this technology are designed to enable new applications, form factors and consumer experiences that will continue to drive the flash industry to new heights,” Sandisk CTO Yoram Cedar told TG Daily in an e-mailed statement.
According to Cedar, the 19nm memory die uses the “most sophisticated” flash memory technology node to date, including advanced process innovations and cell-design solutions.
“SanDisk’s All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability,” he added.
SanDisk is slated to sample its 19nm 64Gb X2 device this quarter and expects to begin high-volume production in the second half of 2011.
At that time, SanDisk will also add 3-bits-per-cell (X3) products fabricated with the 19nm process technology to its product lineup.