Toshiba America Electronic Components Inc. plans to substantially cut 64MB DRAM production by the end of this year. The company is shifting the majority of its DRAM output to 128MB SDRAM and other high-performance memory, including Rambus DRAM (RDRAM) and Double-Data-Rate (DDR) SDRAM.
Toshiba’s latest plans call for reducing 64MB DRAM production down to one million pieces per month by December 1999.
In response to customer demand, Toshiba says it will accelerate the output of 128Mb 133MHz SDRAM, DDR SDRAM and RDRAM.
By June, Toshiba’s flagship Yokkaichi Works DRAM facility will be processing wafers at 0.20 micron for 100 percent of its DRAM production, followed by the upgrading of all of Toshiba’s DRAM production facilities to the 0.20 micron geometry by the end of the third quarter, and focusing on 128MB-based memory solutions for servers, work-stations, high-end PCs and notebook PCs
Toshiba’s 128MB DRAM utilizes the trench memory cell design that resulted from the IBM-Siemens-Toshiba joint development project for 256MB DRAM, which contributes to the reliability and power efficiency of the memory devices. Toshiba’s newest 133MHz SDRAM modules and components are targeted for use in high-end servers and workstations with next-generation processors that feature bus speeds of 133MHz.
For additional information, visit TAEC’s web site at http://www.toshiba.com/taec.