Samsung yesterday said it has begun mass-producing 1Gb DDR SDRAM chips. It added that the parts were the first of their kind to receive Intel validation. “The 1Gb chips are fabbed at 100nm (0.1 micron) and punched out on 300mm wafers. Available in 266MHz and 333MHz speeds – for PC2100 and PC2700 memory, respectively – the chips finally make possible 4GB DIMMs. Samsung said it has produced 2GB unbuffered DIMMs and – interestingly – SO-DIMMs.”
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