Samsung accelerates DDR2 memory, increases density
Seoul (Korea) – Samsung today said that it will begin mass-producing 60 nm DDR2 memory chips by the end of the year, which will result in memory modules that offer more capacity, speed and power efficiency.
Samsung claims it has developed first 60 nm DDR2 chips and will begin mass-production of the chips beginning late this year. Compared to today's 80 nm chips, the 60 nm 800 MHz generation is about 20% faster while the capacity doubles from 1 Gb to 2 Gb. The company indicated that these new chips will make their way into the high-end of the memory market and " accelerate the move toward higher densities."
The 2Gb chips are expected to be used in 8 GB fully-buffered, dual inline memory modules (FBDIMMs), 8 GB registered, dual inline memory modules (RDIMMs), 4 GB unbuffered, dual inline memory modules (UDIMMs) and 4 GB small outline, dual inline memory modules (SODIMMs for notebooks).
Power consumption could drop considerably with the new generation of modules. Samsung said that compared to an 8 GB module consisting of 72 1 Gb chips, a 36 x 2 Gb solution consumes about 30% less power.