IBM researchers have for the first time found a way of enabling phase-change memory to store data for longer, opening the way for low-cost, faster and more reliable memory applications.
A University of California, San Diego team will next week demonstrate a phase-change memory solid state storage device that's thousands of times faster than a conventional hard drive.
Researchers from North Carolina State University have developed a new device that they say represents a big advance for computer memory, making server farms more energy efficient and allowing computers to start more quickly.
IBM is developing a new class of memory that could eventually allow portable devices to store thousands of movies and run on a single battery for weeks at a time.
In Eternal Sunshine of the Spotless Mind, two people undergo a procedure to erase the memory of one another from their minds. And now love-lorn mice, at least, can experience the same relief from upsetting memories.
Hewlett Packard (HP) and Hynix are teaming up to promote the use of ReRAM in future electronic devices. The next-generation chip - which is based on memristor technology - could eventually replace flash memory used in today's mobile phones and MP3 players.
Intel and Micron have successfully sampled the first batch of 3-bit-per-cell (3bpc) NAND flash memory produced with 25-nanometer (nm) process technology.
Micron is currently sampling a monolithic 2-gigabit(Gb) low-power DDR2 (LPDDR2) memory device designed to facilitate improved battery life and optimized system performance for ARM-based smartphones.
A recent discovery by a team of Hewlett Packard researchers could eventually help redefine the capabilities, speed and capacity of conventional memory.
