(Hardware/Hardware Brief)
Wednesday, 04 February 2009
Samsung today announced that it has developed and validated its first 40 nm DRAM chip, which are expected to consume 30% less power than current 50nm modules, and is an important step toward DDR4 development. ...
(Business and Law/Business and Law Brief)
Wednesday, 14 November 2007
... plus falling market demand, quotes in the first quarter of 2008 will see a big slide. Currently, all of Toshiba's 12-inch wafer plants have already entered 56nm process production, while Samsung Electronics ...
(Hardware/Hardware Brief)
Thursday, 19 July 2007
Las Vegas (NV) - Samsung Electronics has announced that its 50nm-class DDR2 in 1Gb density has been certified by Intel to work with Intel's existing and next-generation chipsets at speeds of 800 megabits ...
(Hardware/Hardware Brief)
Monday, 25 June 2007
Hynix Semiconductor is said will migrate NAND flash to 57nm production at its 8-inch fabs in the third quarter of 2007 in an effort to further reduce costs, especially when leading players like Samsung ...
(Business and Law/Business and Law Brief)
Monday, 26 March 2007
Besides a warm up in demand for NAND flash, Taiwan industry players attribute the recent price rise in the NAND flash spot market to extra orders that Toshiba landed from Apple and Samsung Electronics’ ...
(Business and Law/Business and Law Features)
Monday, 06 November 2006
... firm Isuppli, is dominated by Samsung with 46.4% market share, Toshiba with 24.7% and Hynix with 18.5%. Intel and Micron today said that they will add to their existing flash fabs in Manassas, Virginia ...
(Hardware/Hardware Features)
Friday, 20 October 2006
Samsung Electronics announced that it has developed the world's first 50nm DDR2 dynamic random access memory chip (DRAM). According to Samsung, the chips use a new three-dimensional transistor design ...