Seoul (South Korea) – Samsung said it has begun sampling 50 nm DDR3 devices, enabling more power efficient memory modules with up to 16 GB  capacity.

The company said that the 50 nm samples are 2 Gb DDR3 devices, which offer twice the density of today’s 1 Gb chips and save more than 40% of power when compared to their predecessors. Samsung said that the manufacturing of 2 Gb chips results in a productivity gain of 60%.

The company said that the new small form factor enables configurations of up to 8 GB for RIMMs (registered in-line memory modules), as well as 4 GBs for notebook-focused SODIMMs (small outline dual in-line memory modules) . Using dual-die packages, the density climbs to 16 GB for desktop and server applications.

Samsung said that the 2 Gb devices support data rates of up to 1.3 Gb/s at 1.5 or 1.35 volts. Samsung said that it will begin mass production of 2 Gb chips later this year and make 2 Gb DDR3 primary DRAM process technology in 2009.

It would be a bit too optimistic to expect 8 GB ort 16 GB modules to become an affordable option for mainstream computers next year: 8 GB DDR3 modules are not widely available yet and even their DDR2 counterparts are still selling for well more than $1000.


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