Toshiba has announced the launch of a new line-up of 43nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512Mb to 64Gb and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate monolithic 16Gb chips fabricated with 43nm generation process technology, the highest density chips available.
The new devices will start to come to market in the first quarter of 2009.

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