Toshiba develops new 3D NAND flash technology

  • Toshiba today announced a new three dimensional (3D) memory cell array structure that enhances cell density and data capacity without relying on advances in process technology, and with minimal increase in the chip die size. The Japanese chipmaker noted that this design is a potential candidate technology for meeting future demand for higher-density NAND flash memory.

    More here at Digitimes.

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