Samsung to build 1 Gbit DDR2 SDRAM at 80nm
With its DDR2 in all densities already being fabricated at the 80-nanometer node, Samsung Electronics today announced the mass production of 1 Gbit DDR2 DRAM.
The South Korea DRAM maker notes that the advanced process node enables a package size 36% smaller than that implemented at 90nm. The package size of a 1Gb DDR2 chip manufactured on an 80nm process is 11x11.5mm, versus an 11x18mm package at 90nm.
More here at DigiTimes.